This position is associated with the sale of Intel's NAND memory and storage business to SK Hynix. You can read more about the transaction in the press release. The transaction will enhance the resources and potential of the business' storage solutions, including client and enterprise SSDs, in the rapidly growing NAND Flash space amid the era of big data.
This is an exciting time to be at Intel, come join our NAND DESIGN, TECHNOLOGY and MANUFACTURING team as a 3D NAND Device Engineer and work on the most advanced 3D NAND and SSD technology in the world. As the global leader in the semiconductor industry, Intel possesses industry-leading SSD technology and the most capable Triple Level Cell, TLC, and Quadruple Level Cell, QLC, NAND Flash products.
As a 3D NAND Device Engineer, you will be part of a world-class team that will transition to lead the SSD business at SK Hynix. This position aligns to Phase 2 of the transaction, which includes NAND technology and component development along with fab operations. Employees aligned to Phase 2 will continue to be employed by Intel and will continue to develop NAND technology and components and manufacture NAND wafers at the fab. Phase 2 of the transaction is expected to close in March 2025, at which time employees aligned to this phase of the transaction will transition employment to SK Hynix.
Intel's NAND Design, Technology and Manufacturing Group, NAND-DTM, is looking to hire outstanding Device engineers to be part of the team that develops industry leading NAND Flash memory technology. We have exciting opportunities in the Technology Development group for qualified Device Engineers looking to be part of the team responsible for delivering Moore's Law of Scaling for NAND Flash memory. You will be part of the team responsible for overcoming NAND cell scaling challenges using semiconductor device, technology, circuit, and algorithm approaches.
Primary responsibilities will include hands-on characterization, silicon experimentation, and modelling of the observed NAND memory device/array characteristics and engineering solutions to achieve the highest level of NAND memory component performance, quality, and reliability. You will collaborate with process integration engineers, circuit designers, product engineers, system engineers, and reliability engineers to understand the critical issues and inter-dependencies and engineer solutions to address them. You will work with process development and process integration engineers to create leading edge NAND Flash technology, also with circuit designers for designing and implementing circuit schemes and algorithms used for reading and writing the NAND Flash memory and work with SSD systems engineers to establish system policies for the proper usage of NAND component as the storage media in SSDs.
The candidate must have a Ph.D. degree (relevant work experience is a plus but not required) in Electrical Engineering, Applied Physics, or a related discipline.
Demonstrated expertise in semiconductor device physics, semiconductor technology, and semiconductor device characterization techniques.
Understanding of NAND Flash cell and array and the NAND technology in general.
Understanding of manufacturing yield, design and analysis of experiments, statistical data analysis techniques, and device modeling.
Good Problem-solving skills demonstrating good analytical capabilities, sound technical foundations, and creativity.
Good teamwork and inter-personal skills as well as good communication skills.
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.