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Job ID: JR0187107
Job Category: Engineering
Primary Location: Folsom, CA US
Other Locations:
Job Type: Experienced Hire

CMOS Reliability R&D Engineer - SK

Job Description

In this position, you will be working as a member of the Non-Volatile Memory (NVM) Solutions Group's (NSG's) Quality and Reliability team, supporting development of Intel's new emerging NVM 3D-NAND technologies and SSD products, focusing on CMOS transistor and interconnect reliability.

This position is associated with the sale of Intel's NAND memory and storage business to SK hynix (You can read more about the transaction in the press release - The transaction will enhance the resources and potential of the business' storage solutions, including client and enterprise SSDs, in the rapidly growing NAND Flash space amid the era of big data.

This is an exciting time to be at Intel - come join our CMOS TD Reliability Team and work on one of the most advanced 3DNAND and SSD technology portfolios in the world.

As the global leader in the semiconductor industry, Intel possesses many industry-leading SSD technologies including the most capable Quadruple Level Cell (QLC) NAND Flash products. In this role, you will be part of a world-class team that will transition to lead the SSD business at SK hynix.

This position aligns to Phase 2 of the transaction, which includes NAND technology and component development along with fab operations. Employees aligned to Phase 2 will continue to be employed by Intel and will continue to develop NAND technology and components and manufacture NAND wafers at the fab. Phase 2 of the transaction is expected to close in March 2025, at which time employees aligned to this phase of the transaction will transition employment to SK hynix.

Your responsibilities will include but not limited to:

  • Characterizing CMOS device and interconnect FEOL and BEOL reliability.
  • Working in conjunction with process integration and technology development engineers to provide reliability feedback during technology development. Supporting intrinsic device and interconnect level qualification.
  • Working closely with Design Engineering to enhance aging models for key analog and digital circuits, develop methods for validating analog and digital circuit degradation, SOA checking to enhance built-in reliability.
  • Developing new acceleration techniques, test methods and analytical tools to provide fast and effective feedback for process, product and test optimization on reliability issues
  • Determining reliability requirements and technology targets of components to achieve company, customer and other reliability objectives.
  • Influencing design, process, product, test and/or system solutions in order to enable aggressive scaling of Intel's NVM technologies
  • You may be expected to work in cross-functional and cross-company groups of engineers on multi-disciplinary technical projects to solve complex reliability issues during technology development and ramp to high-volume manufacturing.
  • You may also be expected to work with reliability lab technicians for data collection and analysis.


Minimum Qualifications:
You must possess the minimum qualifications below to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates.

  • BS degree in Electrical Engineering, Physics, Materials Science, or Computer Engineering
  • Solid understanding of semiconductor device physics, reliability physics, materials science, probability and statistics, circuit design and simulation using EDA tools, semiconductor processing
  • 3 years of hands-on experience outside academia relevant to CMOS device and interconnect reliability
  • 3 years of experience with test equipment such as semiconductor parametric analyzer CV-IV, probe stations, pulse generators, oscilloscopes, etc. for electrical characterization of electronic materials and devices

Preferred qualifications:
Technical skills:

  • 3+ years of experience in CMOS transistor reliability physics (TDDB, HCI, NBTI, PBTI), inter-metal dielectric reliability and EM
  • 3+ years of experience with test equipment such as semiconductor parametric analyzer CV-IV, pulse generators, oscilloscopes, etc. for electrical characterization of electronic materials and devices
  • Proficient in reliability failure statistics, physics, or reliability failure mechanisms
  • 3+ years of experience of computer programming for testing, and data acquisition, reduction and analysis (C or C++, Perl, Python, LabVIEW)
  • Skill with statistical data analysis packages (e.g. R, JMP or Minitab)
  • Basic knowledge of semiconductor fabrication process, CMOS transistor level circuit design, packaging assembly, test and/or board/system level technology operation
  • Skill and experience in transistor device modeling, characterization, reliability aging models and simulation for circuit reliability assessments a plus
  • An advanced degree (Ph.D. or M.S.) in Electrical Engineering, Physics, Materials Science, or Computer Engineering.

Performance skills:

  • Demonstrated ability to solve technical problems and provide workable solutions
  • Ability to work well in a team setting with people from a wide range of backgrounds
  • Demonstrated ability to work in a fast-paced dynamic environment
  • Demonstrated persistence and commitment to achieving results
  • Ability to clearly communicate achieved results and to influence wide range of audiences

Inside this Business Group

Non-Volatile Solutions Memory Group:  The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices.  The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.

Posting Statement

All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.

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