This position is associated with the sale of Intel’s NAND memory and storage business to SK hynix (You can read more about the transaction in the press release - https://newsroom.intel.com/wp-content/uploads/sites/11/2020/10/nand-memory-news-q-a.pdf). The transaction will enhance the resources and potential of the business’ storage solutions, including client and enterprise SSDs, in the rapidly growing NAND Flash space amid the era of big data.
This is an exciting time to be at Intel – come join our team as a NAND Device Engineer and work on one of the most advanced 3DNAND and SSD technology portfolios in the world. As the global leader in the semiconductor industry, Intel possesses many industry-leading SSD technologies including the most capable Quadruple Level Cell (QLC) NAND Flash products. As a NAND Device Engineer, you will be part of a world-class team that will transition to lead the SSD business at SK hynix.
This position aligns to Phase 2 of the transaction, which includes NAND technology and component development along with fab operations. Employees aligned to Phase 2 will continue to be employed by Intel and will continue to develop NAND technology and components and manufacture NAND wafers at the fab. Phase 2 of the transaction is expected to close in March 2025, at which time employees aligned to this phase of the transaction will transition employment to SK hynix.
NonVolatile Memory Device and Integration engineers are responsible for leading research and development in order to architect, develop and deliver leading edge nonvolatile memory technologies to high volume manufacturing. They contribute to defining process and device architectures, technology collaterals as well as develop scaling paths for leading edge memory technologies. The scope includes development of new types of process and device architectures involving novel materials, structures and integration schemes to deliver industry leadership in density, performance, reliability and cost. They collaborate with technology development partners in defining goals, developing the vision, aligning strategy and driving fast paced silicon development to meet aggressive technology node cadences. In addition they work closely with the product and system teams to ensure seamless integration of the memory components into Intels system products as well as with the manufacturing Fabs to ensure a seamless technology transfer and ramp to support the full envelope of component and system products.
You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates.
MS degree with at least 4+ years additional experience, or a PhD with 2+ years additional experience, in Electrical Engineering or Physics, or related field with
Minimum 4+ years' experience in the area of Semiconductor and Device Physics, or device processing, electrical characterization, and device and circuit models.
Minimum 4+ years' experience in technical problem solving.
Experience in semiconductor fabrication and characterization.
Extensive Hands-on experience on electrical characterizations of semiconductor devices
Electrical circuit design and debug
Proficiency in statistical data analysis and DOE
Knowledge of NVM solutions for storage and computing is a plus.
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.