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Job ID: JR0117754
Job Category: Engineering
Primary Location: Santa Clara, CA US
Other Locations: US, New Mexico, Albuquerque
Job Type: College Grad

Senior Device Engineer - Memory Technology

Job Description

This is an exciting opportunity to work on the latest breakthrough in Non-Volatile Memory Technology: Intel 3D XPoint memory and Intel Optane Technology.

Non-volatile Memory Device engineers are responsible for leading research and development in order to architect, develop and deliver leading edge nonvolatile memory technologies to high volume manufacturing. They contribute to defining process and device architectures, technology collaterals as well as develop scaling paths for leading edge memory technologies. The scope includes development of new types of process and device architectures involving novel materials, structures and integration schemes to deliver industry leadership in density, performance, reliability and cost. They collaborate with technology development in defining goals, developing the vision, aligning strategy and driving fast paced silicon development to meet aggressive technology node cadences. In addition they work closely with the product and system teams to ensure seamless integration of the memory components into Intel's system products as well as with the manufacturing fabs to ensure a seamless technology transfer and ramp to support the full envelope of component and system products.

The ideal candidate  should be self-motivated, committed, enthusiastic and able to work in a team.


Qualifications

You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates. Experience listed below would be obtained through a combination of your school work/classes/research and/or relevant previous job and/or internship experiences. This is an entry level position and will be compensated accordingly.

Minimum Requirements:
The candidate must have PhD degree in Electrical Engineering, Material Science and Engineering, or related field.

12+ months of experience in the following areas:

  • Semiconductor Device characterization and data analysis/modeling
  • Semiconductor device fabrication and physical characterization
  • Electrical circuit design/debug/characterization
  • Proficient in coding/scripting language (C/C++/python/MATLAB)


Preferred Requirements:

12+ months of experience in the following areas:

  • Structured problem solving
  • Direct experiences in memory technology, design, fabrication, characterization, modeling and/or yield enhancement
  • Hands-on experience with electrical test equipment such as oscilloscope, pulse generator, semiconductor parameter analyzer (CV-IV), and controlling software
  • Proficiency in statistical analysis methods and analysis software, such as JMP
  • Atomistic memories and switches such as PCM, RRAM, FE-RAM, MRAM and CBRAM

Inside this Business Group

Non-Volatile Solutions Memory Group:  The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices.  The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.



Other Locations

US, New Mexico, Albuquerque



Posting Statement

All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance....

USCollege GradJR0117754
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