The device engineer will be responsible for CMOS transistor development, optimization, and usage in high-speed memory technologies such as 3D-Xpoint and 3D-NAND to extend Intel's lead in NVM performance, cost, and quality. The individual will work effectively with diverse stakeholders such as design, product, integration, yield enhancement and process engineering groups to resolve CMOS device related issues, understand interactions with the memory array, and help in successful transfer to high volume manufacturing.
Must be knowledgeable in CMOS device physics, process flow, and device optimization techniques. Direct experience with test structure bench characterization is required. Need to be able to design experiments and analyze CMOS related parametric/probe data to troubleshoot and optimize product performance and yield. Should be familiar with spice model generation and corner methodology. In this position, strong communication and influencing skills are required. Knowledge of advanced CMOS nodes with experience in gate dielectric scaling, stress enhancement techniques, and low-voltage and high-voltage device integration are also necessary.
This position is for an experienced device engineer.
Non-Volatile Memory Device and Integration engineers are responsible for leading research and development in order to architect, develop and deliver leading edge nonvolatile memory technologies to high volume manufacturing. They contribute to defining process and device architectures, technology collaterals as well as develop scaling paths for leading edge memory technologies. The scope includes development of new types of process and device architectures involving novel materials, structures and integration schemes to deliver industry leadership in density, performance, reliability and cost. They collaborate with technology development partners in defining goals, developing the vision, aligning strategy and driving fast paced silicon development to meet aggressive technology node cadences. In addition they work closely with the product and system teams to ensure seamless integration of the memory components into Intel's system products as well as with the manufacturing fabs to ensure a seamless technology transfer and ramp to support the full envelope of component and system products.
Ph.D. degree and 2+ years of experience or a Master's degree with 5+ years of experience.
The degree should be in Electrical Engineering or related science disciplines such as Applied Physics, Physics, etc.
Additional Qualifications include:- Demonstrated experience in technical problem solving capability and good teamwork, leadership and communication skills. Demonstrated expertise in semiconductor device physics, process integration, fabrication and characterization techniques. Understand the technology challenges and process changes for new parts and their impact on part performance. Expert in data and statistical analysis tools (such as JMP, Excel, etc.) and techniques. Strong knowledge of DOE principles and analytical thinking skills is also necessary. Ability to work with a cross-disciplinary team of external and internal partners
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
US, California, Folsom
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance....